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Author(s): M. Aissaoui, C. Kahloun, O. U. Salman, and S. Queyreau Avalanchelike plastic bursts in crystalline materials follow power-law statistics, but the scaling exponents and cutoff parameters vary widely in the literature ($α$ ranging from 1 to 2.2), hindering predictive modeling. Since distributions do not follow Gaussian behavior, the average of plastic kin… [Phys. Rev. Materials 10, 053603] Published Fri May 15, 2026

Author(s): Toshio Miyamachi, Kota Iwata, Takushi Iimori, Shunsuke Yoshizawa, Yoshiyuki Ohtsubo, Takuto Nakamura, Shin-ichi Kimura, Fumitoshi Iga, and Fumio Komori Local atomic and electronic structures of the ${\mathrm{YbB}}_{12}$(001) surfaces are studied by scanning tunneling microscopy and spectroscopy at low temperatures for revealing the hybridized surface electronic states. The surface was prepared by annealing in an ultrahigh vacuum at...

Author(s): Markus Meinert The metallic oxide ${\mathrm{RuO}}_{2}$ hosts a fascinating edge case of magnetism: while nonmagnetic in ideal bulk material, density functional theory (DFT) predicts an altermagnetic ground state within the $\mathrm{DFT}+U$ method. The magnetic state of strained or doped thin films remains controve… [Phys. Rev. Materials 10, 054411] Published Fri May 15, 2026

Author(s): Zhao Fan Over the past two decades, various machine learning (ML) methods have been broadly used to predict properties from structure of materials, which is valuable in accelerating the discovery and development of new materials for different applications. Convolutional neural networks (CNN), however, have n… [Phys. Rev. Materials 10, 053803] Published Thu May 14, 2026

Author(s): Andrew F. May, Christopher M. Pasco, V. O. Garlea, Karolina Gornicka, Matthias D. Frontzek, Xiaoping Wang, Pyeongjae Park, and Andrew D. Christianson Chromium-based spinels with a breathing pyrochlore lattice provide a model platform for studying competing magnetic interactions arising from their lattice geometry. The authors report the growth of single crystals of AgInCr₄S₈ and note that the observed properties are sensitive to growth...

Author(s): A. Levchuk, P. Dufour, K. Parmar, M. Viret, T. Maroutian, S. Fusil, V. Garcia, and J.-Y. Chauleau While ferroelectrics have long dominated device applications, their antiferroelectric counterparts remain largely unexplored. However, now, antiferroelectrics are stepping into the spotlight, promising breakthroughs in energy storage, solid-state cooling, and even new computing paradigms. Here, we capture the elusive transition between...

Author(s): S. R. Lee, N. A. Modine, and W. R. Wampler In ab initio studies of carrier-capture processes in defective semiconductor materials, the single-effective-mode formalism and the static-coupling approximation have become the predominant theoretical approaches for determining carrier-capture coefficients. The single-mode formalism relies on accur… [Phys. Rev. Materials 10, 054602] Published Tue May 12, 2026